Optimization of a PVC Membrane for Reference Field Effect Transistors
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چکیده
منابع مشابه
Optimization of a PVC Membrane for Reference Field Effect Transistors
For the miniaturization of ISFET sensing systems, the concept of a REFET with low ion sensitivity is proposed to replace the conventional reference electrodes through the arrangement of a quasi reference electrode and a differential readout circuit. In this study, an ion-unblocking membrane was used as the top layer of a REFET. To optimize the REFET performance, the influences of the silylating...
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a novel and ultra low cost isfet electrode and measurement system was designed for isfet application and detection of hydronium, hydrazinium and potassium ions. also, a measuring setup containing appropriate circuits, suitable analyzer (advantech board), de noise reduction elements, cooling system and pc was used for controlling the isfet electrode and various characteristic measurements. the t...
Review on Optimization Methods of Carbon Nanotube Field-Effect Transistors
Carbon nanotube field-effect transistors (CNTFETs) have been considered as a replacement for, or complement to, future semiconductor devices due to high mobility, low defect structure, and intrinsic nanometer scale of carbon nanotubes (CNTs). The great superiority in performance for CNTFETs vis-a-vis state-of-the-art silicon devices has attracted an intense research effort to explore their appl...
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Carbon nanotube field-effect transistors (CNTFETs) have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. CNTFETs can be fabricated with Ohmic or Schottky type contacts. We focus here on Schottky barrier CNTFETs which operate by modulating the transmission coefficient of carriers through the Schottky barriers at the interf...
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Silicon Carbide (SiC) is a wide band-gap semiconductor material with excellent material properties for high frequency, high power and high temperature electronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. The rapid miniaturization of commercial devices demands better physical models ...
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ژورنال
عنوان ژورنال: Sensors
سال: 2009
ISSN: 1424-8220
DOI: 10.3390/s90302076